Silver oxide Schottky contacts on n-type ZnO

被引：130

作者：

Allen, M. W. ^{[1
]}

Durbin, S. M.

Metson, J. B.

机构：

[1] Univ Canterbury, Dept Elect & Comp Engn, Christchurch 8043, New Zealand

[2] Univ Auckland, Dept Chem, Auckland 1142, New Zealand

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期

关键词：

D O I：

10.1063/1.2768028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method of fabricating highly rectifying Schottky contacts on n-type ZnO using silver oxide has been developed and used to compare diode performance on hydrothermal and melt grown, bulk, single crystals. Silver oxide diodes on hydrothermal ZnO have lower ideality factors, lower reverse current voltage dependence, higher series resistance, and larger surface-polarity related differences in barrier height, compared to those on melt ZnO. These effects are explained by the large difference in resistivity between hydrothermal and melt ZnO. Barrier heights of 1.20 eV were achieved on the Zn-polar face of hydrothermal ZnO which are the highest reported for n-type ZnO. (C) 2007 American Institute of Physics.

引用

页数：3

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