Fabrication of cantilever based mass sensors integrated with CMOS using direct write laser lithography on resist

被引:20
作者
Forsén, E
Nilsson, SG
Carlberg, P
Abadal, G
Pérez-Murano, F
Esteve, J
Montserrat, J
Figueras, E
Campabadal, F
Verd, J
Montelius, L
Barniol, N
Boisen, A
机构
[1] Tech Univ Denmark, Dept Micro & Nanotechnol, DK-2800 Lyngby, Denmark
[2] Lund Univ, Solid State Phys & Nanometer Consortium, S-22362 Lund, Sweden
[3] Univ Autonoma Barcelona, Dept Engn Electron, E-08193 Barcelona, Spain
[4] Univ Autonoma Barcelona, Inst Microelect Barcelona, E-08193 Bellaterra, Spain
关键词
D O I
10.1088/0957-4484/15/10/021
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A CMOS compatible direct write laser lithography technique has been developed for cantilever fabrication on pre-fabricated standard CMOS. We have developed cantilever based sensors for mass measurements in vacuum and air. The cantilever is actuated into lateral vibration by electrostatic excitation and the resonant frequency is detected by capacitive readout. The device is integrated on standard CMOS circuitry. In the work a new direct write laser lithography (DWL) technique is introduced. This laser lithography technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of poly(methyl methacrylate) (PMMA) on lift-off resist (LOR). Laser writing evaporates the PMMA, exposing the LOR. A resist solvent is used to transfer the pattern down to the substrate. Metal lift-off followed by reactive ion etching is used for patterning the structural poly-Si layer in the CMOS. The developed laser lithography technique is compatible with resist exposure techniques such as electron beam lithography. We demonstrate the fabrication of sub-micrometre wide suspended cantilevers as well as metal lift-off with feature line widths down to approximately 500 nm.
引用
收藏
页码:S628 / S633
页数:6
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