Molecular dynamics simulation of intrinsic point defects in germanium

被引:16
作者
Spiewak, P.
Muzyk, M.
Kurzydlowski, K. J.
Vanhellemont, J.
Mlynarczyk, K.
Wabinski, P.
Romandic, I.
机构
[1] Warsaw Univ Technol, Fac Mat Sci & Engn, Mat Design Div, PL-02507 Warsaw, Poland
[2] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium
[3] Umicore EOM, PL-01226 Warsaw, Poland
[4] Umicore EOM, B-2250 Olen, Belgium
关键词
computer simulation; diffusion; molecular dynamics; point defects; solubility; semiconducting germanium;
D O I
10.1016/j.jcrysgro.2006.11.316
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Results are presented of the calculations of thermodynamic properties of intrinsic point defects in germanium. The results are based on molecular dynamics calculations using the Stillinger and Weber potential and on the Einstein diffusion equation. The obtained formation and migration energies of the neutral vacancy, as well as the formation energy of the self-interstitial, are in good agreement with other recent calculations results. It is also shown that the calculated formation energy of the neutral vacancy is in good agreement with the experimental values obtained from quenching experiments, taking into account the equilibrium theory in pure elemental crystals. Finally, molecular dynamics simulations of the relaxation of a spherical vacancy cluster in germanium predicted a truncated octahedral equilibrium shape, similar to the observed surface pit shape on polished germanium wafers. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:12 / 17
页数:6
相关论文
共 52 条
[1]  
BAILLY F, 1968, LATTICE DEFECTS SEMI, P231
[2]   COMPARATIVE-STUDY OF SILICON EMPIRICAL INTERATOMIC POTENTIALS [J].
BALAMANE, H ;
HALICIOGLU, T ;
TILLER, WA .
PHYSICAL REVIEW B, 1992, 46 (04) :2250-2279
[3]   NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J].
BENNEMAN, KH .
PHYSICAL REVIEW, 1965, 137 (5A) :1497-+
[4]  
Bernstein N, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.075212
[5]   Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures [J].
Bracht, H ;
Pedersen, JF ;
Zangenberg, N ;
Larsen, AN ;
Haller, EE ;
Lulli, G ;
Posselt, M .
PHYSICAL REVIEW LETTERS, 2003, 91 (24)
[6]   Self-interstitial defect in germanium [J].
da Silva, AJR ;
Janotti, A ;
Fazzio, A ;
Baierle, RJ ;
Mota, R .
PHYSICAL REVIEW B, 2000, 62 (15) :9903-9906
[7]  
DASILVA AJR, 2001, PHYSICA B, P302
[8]   MOLECULAR-DYNAMICS SIMULATION OF AMORPHOUS-GERMANIUM [J].
DING, KJ ;
ANDERSEN, HC .
PHYSICAL REVIEW B, 1986, 34 (10) :6987-6991
[9]  
Ershov S. N., 1977, Soviet Physics - Solid State, V19
[10]   Microscopic picture of the single vacancy in germanium [J].
Fazzio, A ;
Janotti, A ;
da Silva, AJR ;
Mota, R .
PHYSICAL REVIEW B, 2000, 61 (04) :R2401-R2404