Microscopic picture of the single vacancy in germanium

被引:71
作者
Fazzio, A
Janotti, A
da Silva, AJR
Mota, R
机构
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
[2] Univ Fed Santa Maria, Dept Fis, BR-97105900 Santa Maria, RS, Brazil
关键词
D O I
10.1103/PhysRevB.61.R2401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A complete microscopic picture of the germanium vacancy is presented, and our results are compared with recent measurements. We analyze, through first principles calculations, the structural relaxations, Jahn-Teller distortions, and orbitals for the charge states (+ +, +, 0, -, - -). The formation energies for the different charge states are presented, as well as the positions of the (+ +/+), (+/0), (0/-), and (-/- -) levels, and we obtain that the vacancy in Ge is not an Anderson negative-U system, as opposed to the silicon vacancy. We propose as an explanation a much smaller electron-lattice coupling for the E mode in germanium than in silicon.
引用
收藏
页码:R2401 / R2404
页数:4
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