COMPENSATION OF P-TYPE DOPING IN ZNSE - THE ROLE OF IMPURITY-NATIVE DEFECT COMPLEXES

被引：170

作者：

GARCIA, A ^{[1
]}

NORTHRUP, JE ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.74.1131

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have examined the possibility that the saturation of the hole concentration observed in the p-type doping of ZnSe is caused by the formation of complexes between the substitutional acceptors and charged native defects such as Se vacancies and Zn interstitials. We present a simple model of compensation in which the relevant parameters are computed from first principles. A large lattice relaxation associated with the Se vacancy and the corresponding complex lowers their formation energy significantly. However, the large binding energy of the acceptor-Zn-interstitial complex should make it a more efficient compensator. Under typical growth conditions, our model reproduces the experimentally observed saturation of the hole concentration in the 1018 cm-3 range. © 1995 The American Physical Society.

引用

页码：1131 / 1134

页数：4

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