SELF-COMPENSATION THROUGH A LARGE LATTICE-RELAXATION IN P-TYPE ZNSE

被引：117

作者：

CHADI, DJ

CHANG, KJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 06期

关键词：

D O I：

10.1063/1.101837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：575 / 577

页数：3

共 21 条

[1] PHOTOLUMINESCENCE SPECTRA OF OXYGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].

AKIMOTO, K ;

MIYAJIMA, T ;

MORI, Y .

PHYSICAL REVIEW B, 1989, 39 (05) :3138-3144

[2] DONOR-ACCEPTOR PAIR BANDS IN ZNSE [J].

BHARGAVA, RN ;

SEYMOUR, RJ ;

FITZPATRICK, BJ ;

HERKO, SP .

PHYSICAL REVIEW B, 1979, 20 (06) :2407-2419

[3] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW B, 1989, 39 (14) :10063-10074

[4] METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2187-2190

[5] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[6] IONIZATION-ENERGY OF THE SHALLOW NITROGEN ACCEPTOR IN ZINC SELENIDE [J].

DEAN, PJ ;

STUTIUS, W ;

NEUMARK, GF ;

FITZPATRICK, BJ ;

BHARGAVA, RN .

PHYSICAL REVIEW B, 1983, 27 (04) :2419-2428

[7] ZINC VACANCY-ASSOCIATED DEFECTS AND DONOR-ACCEPTOR RECOMBINATION IN ZNSE [J].

DUNSTAN, DJ ;

NICHOLLS, JE ;

CAVENETT, BC ;

DAVIES, JJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (34) :6409-6419

[8] OPTICAL STUDIES OF SHALLOW ACCEPTORS IN CDS AND CDSE [J].

HENRY, CH ;

NASSAU, K ;

SHIEVER, JW .

PHYSICAL REVIEW B, 1971, 4 (08) :2453-&

[9] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[10]

MANDEL G, 1964, PHYS REV A, V136, P826

← 1 2 3 →