Passive Q-switched single-frequency Nd:YVO4 laser with GaAs saturable absorber

被引：19

作者：

Gu, GQ ^{[1
]}

Zhou, F ^{[1
]}

Zhang, G ^{[1
]}

Chin, MK ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Photon Lab, Singapore 639798, Singapore

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 06期

关键词：

D O I：

10.1049/el:19980321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate a highly compact, passively Q-switched Nd:YVO4 laser using an uncoated GaAs wafer as a frequency-dependent output coupler as well as a saturable absorber. Owing to the Fabry-Perot effect, the effective reflection coefficient of the GaAs mirror is 0.7. The coupled-resonator cavity results in an intrinsic single-frequency operation. Under 1.4W optical pumping, 9ns pulses at a repetition rate of 125kHz in a single-longitudinal and transverse mode were obtained.

引用

页码：564 / 565

页数：2

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