Boron nitride synthesized at ambient pressure and room temperature by plasma electrolysis

被引：19

作者：

Guo, Jing

Wang, Hao ^{[1
]}

Zhu, JingSen

Zheng, Kun

Zhu, ManKang

Yan, Hui

Yoshimura, Masahiro

机构：

[1] Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100022, Peoples R China

[2] Beijing Univ Technol, Inst Microstruct & Properties Mat, Beijing 100022, Peoples R China

[3] Tokyo Inst Technol, Mat Res Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

ELECTROCHEMISTRY COMMUNICATIONS | 2007年 / 9卷 / 07期

基金：

中国国家自然科学基金;

关键词：

boron nitride; plasma electrolysis; ambient atmosphere;

D O I：

10.1016/j.elecom.2007.04.005

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A mixture of cubic boron nitride (c-BN) and extra-diamond boron nitride (E-BN) has been synthesized at ambient pressure and room temperature by plasma electrolysis. The formation of c-BN was characterized by FTIR and TEM measurements. This method may not only offer a facile technique for c-BN production, but also provide a new research field in c-BN thermodynamics. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：1824 / 1827

页数：4

共 16 条

[1] CALCULATION OF THE STRAIN-INDUCED SHIFTS IN THE INFRARED-ABSORPTION PEAKS OF CUBIC BORON-NITRIDE [J].