Bottom-up approach for carbon nanotube interconnects

被引：390

作者：

Li, J ^{[1
]}

Ye, Q ^{[1
]}

Cassell, A ^{[1
]}

Ng, HT ^{[1
]}

Stevens, R ^{[1
]}

Han, J ^{[1
]}

Meyyappan, M ^{[1
]}

机构：

[1] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 15期

关键词：

D O I：

10.1063/1.1566791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a bottom-up approach to integrate multiwalled carbon nanotubes (MWNTs) into multilevel interconnects in silicon integrated-circuit manufacturing. MWNTs are grown vertically from patterned catalyst spots using plasma-enhanced chemical vapor deposition. We demonstrate the capability to grow aligned structures ranging from a single tube to forest-like arrays at desired locations. SiO2 is deposited to encapsulate each nanotube and the substrate, followed by a mechanical polishing process for planarization. MWNTs retain their integrity and demonstrate electrical properties consistent with their original structure. (C) 2003 American Institute of Physics.

引用

页码：2491 / 2493

页数：3

共 20 条

[1] Coupling of carbon nanotubes to metallic contacts [J].