Ion-induced secondary electron emission coefficient (γ) of bulk-MgO single crystals

被引：21

作者：

Kim, DI ^{[1
]}

Lim, JY ^{[1
]}

Kim, YG ^{[1
]}

Ko, JJ ^{[1
]}

Lee, CW ^{[1
]}

Cho, GS ^{[1
]}

Choi, EH ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Electrophys, PDP Res Ctr, Charged Particle Beam & Plasma Lab, Seoul 139701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4A期

关键词：

ion-induced secondary electron emission coefficient; bulk-MgO single crystal; AC-PDPs;

D O I：

10.1143/JJAP.39.1890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ion induced secondary electron emission coefficient gamma of bulk-MgO single crystal has been measured by the gamma-focused ion beam system. It is found that the bulk-MgO single crystal with (111) orientation has the highest gamma from 0.08 up to 0.21, and the gamma values are in the order of the crystallinities, (111) > (200) > (220) for operating Ne+ ions ranging from 50 eV to 300 eV in this experiment. These results are consistent with our previous reports for MgO protective layers with respective orientations of (111), (200), and (220).

引用

页码：1890 / 1891

页数：2

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