New technologies for CIGS photovoltaics

被引：90

作者：

Delahoy, AE ^{[1
]}

Chen, LF ^{[1
]}

Akhtar, M ^{[1
]}

Sang, BS ^{[1
]}

Guo, SY ^{[1
]}

机构：

[1] Energy Photovolta Inc, Lawrenceville, NJ 08648 USA

来源：

SOLAR ENERGY | 2004年 / 77卷 / 06期

关键词：

Cu(In; Ga)Se-2; CIGS; hybrid process; thin films; photovoltaics; Cu sputtering; hollow cathode sputtering; transparent conductors; window layers; PV modules;

D O I：

10.1016/j.solener.2004.08.012

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper describes a new process for forming Cu(In,Ga)Se-2 (CIGS) by vacuum processing. It is termed the hybrid process, and it involves thermal delivery of In, Ga, and Se and sputtering of Cu. The optimization of the process is described, followed by its successful application to large area processing of CIGS devices and modules. Other processing issues in module formation are also discussed and analyzed, including deposition of the buffer and window layers, and interconnect resistance. The paper also describes the application of a new sputtering process for compound film formation to the area of CIGS processing. This process is termed reactive environment sputtering, and is based on a hollow cathode discharge. The process is applied to the formation of transparent conducting oxides (TCO) such as ZnO:Al, ZnO:B, In2O3:Mo (IMO) and In2O3:Ti (ITiO), and to their use as window layers for CIGS devices. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：785 / 793

页数：9

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