CMOS charge-transfer preamplifier for offset-fluctuation cancellation in low-power A/D converters

被引:34
作者
Kotani, K [1 ]
Shibata, T [1 ]
Ohmi, T [1 ]
机构
[1] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan
关键词
A/D converter; charge transfer preamplifier; comparator; dynamic latch; low power;
D O I
10.1109/4.668991
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed a low-power, high-accuracy comparator composed of a dynamic latch and a CMOS charge transfer preamplifier (CT preamplifier). The CT preamplifier amplifies the Input signal with no static power dissipation, and the operation is almost insensitive to the device parameter fluctuations. The low-power and high-accuracy comparator has been realized by combining the CT preamplifier with a dynamic latch circuit, The fluctuation in the offset voltage of a dynamic latch is reduced by a factor of thr preamplifier gain. A 4-bit flash A/D converter circuit has been designed and fabricated by 0.6-mu m CMOS process. Low differential nonlinearity of less than +/-4 mV has been verified by the measurements on rest circuits, showing 8-bit resolution capability. Very low power operation at 4.3 mu W per MS/s per comparator has also been achieved.
引用
收藏
页码:762 / 769
页数:8
相关论文
共 7 条
[1]  
DIHGWALL AGF, 1985, IEEE J SOLID STATE C, V20, P1138
[2]   HIGH SENSITIVITY CHARGE-TRANSFER SENSE AMPLIFIER [J].
HELLER, LG ;
SPAMPINATO, DP ;
YAO, YL .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (05) :596-601
[3]   AN 8-BIT 20-MS/S CMOS A/D CONVERTER WITH 50-MW POWER-CONSUMPTION [J].
HOSOTANI, S ;
MIKI, T ;
MAEDA, A ;
YAZAWA, N .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1990, 25 (01) :167-172
[4]  
KOTANI K, 1996, 1996 IEEE INT S CIRC, V4, P205
[5]  
KOTANI K, 1997, S VLSI CIRC JUN, P21
[6]   A 10-B 20-MHZ 30-MW PIPELINED INTERPOLATING CMOS ADC [J].
KUSUMOTO, K ;
MATSUZAWA, A ;
MURATA, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (12) :1200-1206
[7]   A 10-B 50-MHZ PIPELINED CMOS A/D CONVERTER WITH S/H [J].
YOTSUYANAGI, M ;
ETOH, T ;
HIRATA, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (03) :292-300