New complimentary metal-oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates

A new experimental complimentary metal-oxide semiconductor (CMOS) technology is presented, fabricated with Schottky source and drain and a T-shaped gate, The process results in a significant reduction in the number of steps required to fabricate CMOS, and no longer relies on implantation of the source and drain. The gate resistance and the source/drain contact resistance are very low compared to conventional designs. Performance of 0.25 and 0.15 mu m channel length devices has been measured and the technology is readily scalable to sub-0.1 mu m dimensions. (C) 1997 American Vacuum Society.