Determination of junction temperature and thermal resistance in the GaN-based LEDs using direct temperature measurement

被引：23

作者：

Hwang, WJ ^{[1
]}

Lee, TH ^{[1
]}

Kim, L ^{[1
]}

Shin, MW ^{[1
]}

机构：

[1] Myong Ji Univ, Dept Ceram Engn, Semicond Mat Devices Lab, Kyunggido 449728, South Korea

来源：

5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS | 2004年

关键词：

D O I：

10.1002/pssc.200405098

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reports on the experimental methods of the determination of junction temperature and thermal resistance in GaN-based LEDs. For the direct temperature measurement and investigation of thermal distribution on the operating LED chip, nematic liquid crystal thermographic technique was employed. Hot spot was observed and its size was increasing with the driving input power. The initial hot spot with an anisotropic-isotropic transition of 29 degreesC appeared near the cathode region under the drive voltage of 2.95 V and the current of 8.1 mA. The size of the hot spot was increased with input power. Micro thermocouple was embedded into the epoxy package for the investigation of its size effects on thermal behavior. For the specific structure of LED package investigated the thermal resistances were calculated to be 265 degreesC/ W and 215 degreesC/ W for the low epoxy domed package and high epoxy domed package, respectively. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2429 / 2432

页数：4