High performance AlGaInN ultraviolet light-emitting diode at the 340 nm wavelength

被引：15

作者：

Jeon, SR ^{[1
]}

Gherasimova, M

Ren, ZY

Su, J

Cui, G

Han, J

Peng, HB

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[2] Brown Univ, Div Engn, Providence, RI 02912 USA

[3] Lumileds Lighting LLC, San Jose, CA 95131 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 11A期

关键词：

ultraviolet LEDs; AlGaInN MQWs; biological sensing; fluorescence; excitation pulsed source;

D O I：

10.1143/JJAP.43.L1409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on high output power from the quaternary AlGaInN multiple quantum well (MQW) ultraviolet light emitting diodes (UV LEDs) in the 340 nm wavelength range. The output power up to 1.5 mW from a 100mum diameter device with bare-chip configuration was measured under room temperature cw operation. The internal quantum efficiency was estimated to be between 7 and 10%. In addition, the output power and external quantum efficiency for fully packaged 1 x 1 mm(2) large area device were as high as 54.6 mW and 1.45%, respectively, at the injection current of 200 A/cm(2) under pulsed operation. The devices were incorporated into prototype system for fluorescence based bio-sensing as excitation source.

引用

收藏

页码：L1409 / L1412

页数：4

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