Cadmium zinc telluride films for wide band gap solar cells

被引：7

作者：

McCandless, BE ^{[1
]}

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190565

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The CdTe-ZnTe alloy system is evaluated for application in high efficiency polycrystalline thin-film multijunction solar cells. Single phase Cd1-xZnxTe alloy films 34 mum thick, with x from 0 to 1 and band gap from 1.5 to 2.25 eV, were deposited by co-evaporation from binary CdTe and ZnTe sources. Film composition, x in Cd1-xZnxTe varied linearly with source effusion rate ratio. Lattice parameter varied linearly with composition, while optical band gap exhibited a bowing parameter, b = 0.3. Sub-band gap transmission, T/(1-R), is similar to80%. Post-deposition treatment in argon at 400degreesC to 600degreesC does not measurably alter the alloy composition. Treatment in CdCl2:O-2:Ar vapor at 400degreesC preferentially removes Zn from the Cd1-xZnxTe alloy. Treatment in ZnCl2:O-2:Ar vapor at similar to400degreesC results in slight compositional change due to formation of ZnO and Te at the surface. The photovoltaic operation of Cd1-xZnxTe/CdS devices is presented.

引用

页码：488 / 491

页数：4

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