II-VI SEMICONDUCTOR ALLOY-FILMS - CD1-XZNXTE

被引：9

作者：

GUPTA, P

CHATTOPADHYAY, KK

CHAUDHURI, S

PAL, AK

机构：

[1] Department of Materials Science, Indian Association for the Cultivation of Science, Calcutta

来源：

JOURNAL OF MATERIALS SCIENCE | 1993年 / 28卷 / 02期

关键词：

D O I：

10.1007/BF00357829

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical conductivity and optical properties of undoped and copper-doped Cd1-xZnxTe (0.1 < x < 0.8) films prepared by the two-zone hot-wall technique, were measured at temperatures of 95-550 K. Copper-doped films showed an indirect transition at approximately 1.54 eV. It was observed that the grain-boundary scattering played an important role on the electron transport properties of the films. Increased doping dose culminated in segregation of dopant (copper) at the grain boundaries. The grains were partially depleted with filled traps and the trap states lay below the Fermi level.

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页码：496 / 500

页数：5

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