GROWTH OF CDZNTE ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引：17

作者：

GOELA, JS

TAYLOR, RL

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 12期

关键词：

D O I：

10.1063/1.98804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：928 / 930

页数：3

共 13 条

[1] CRYSTAL-GROWTH OF CD1-XZNXTE AND ITS USE AS A SUPERIOR SUBSTRATE FOR LPE GROWTH OF HG0.8CD0.2TE [J].

BELL, SL ;

SEN, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :112-115

[2] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

YANKA, RW ;

GILES, NC ;

SCHETZINA, JF ;

MAGEE, TJ ;

LEUNG, C ;

KAWAYOSHI, H .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :313-315

[3] CHARACTERISTICS OF CDTE GROWN ON SI BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

CHOU, RL ;

LIN, MS ;

CHOU, KS .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :523-525

[4] GROWTH OF CD1-XZNX TE BY MOLECULAR-BEAM EPITAXY [J].

FELDMAN, RD ;

AUSTIN, RF ;

DAYEM, AH ;

WESTERWICK, EH .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :797-799

[5] GROWTH OF CDTE ON GAAS BY ORGANOMETALLIC VAPOR-PHASE HETEROEPITAXY [J].

GHANDHI, SK ;

TASKAR, NR ;

BHAT, IB .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :742-745

[6]

GOELA JS, 1986, CVD TP9065 INC TECHN

[7]

GOELA JS, 1986, SPIE P, V659, P161

[8] METALORGANIC GROWTH OF EPITAXIAL-FILMS OF CDTE AND HGCDTE ON SAPPHIRE SUBSTRATES [J].

HOKE, WE ;

TRACZEWSKI, R ;

KREISMANIS, VG ;

KORENSTEIN, R ;

LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :276-278

[9] OPTOELECTRONIC PROPERTIES OF CD1-XZNXTE FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES [J].

OLEGO, DJ ;

FAURIE, JP ;

SIVANANTHAN, S ;

RACCAH, PM .

APPLIED PHYSICS LETTERS, 1985, 47 (11) :1172-1174

[10] GRADIENT INFRARED OPTICAL MATERIAL PREPARED BY A CHEMICAL VAPOR-DEPOSITION PROCESS [J].

PICKERING, MA ;

TAYLOR, RL ;

MOORE, DT .

APPLIED OPTICS, 1986, 25 (19) :3364-3372

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