Room-temperature ferromagnetism in highly Cr-doped II-VI diluted magnetic semiconductor Zn1-xCrxTe

被引:59
作者
Saito, H [1 ]
Zayets, V [1 ]
Yamagata, S [1 ]
Ando, K [1 ]
机构
[1] AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
关键词
D O I
10.1063/1.1556117
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly Cr-doped II-VI diluted magnetic semiconductor (DMS) Zn1-xCrxTe films with a ferromagnetic long-range order have been grown. A phase diagram of Zn1-xCrxTe in relation to the growth temperature and Cr concentration was determined. Magnetic circular dichroism measurements revealed that a magnetically single phase of DMS Zn1-xCrxTe is obtained in the films with Cr concentration up to x=0.20. Spontaneous magnetization of the film with x=0.20 disappears around 300 K, indicating that the Zn1-xCrxTe is a DMS with room-temperature ferromagnetism. (C) 2003 American Institute of Physics.
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页码:6796 / 6798
页数:3
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