High temperature (>400 K) ferromagnetism, in III-V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy

被引：198

作者：

Hashimoto, M ^{[1
]}

Zhou, YK ^{[1
]}

Kanamura, M ^{[1
]}

Asahi, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

SOLID STATE COMMUNICATIONS | 2002年 / 122卷 / 1-2期

关键词：

GaN-based semiconductor; diluted magnetic semiconductor; GaCrN; ferromagnetism; electron-cyclotron-resonance; molecular-beam epitaxy;

D O I：

10.1016/S0038-1098(02)00073-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new III-V nitride-based diluted-magnetic semiconductor GaCrN has been successfully synthesized for the first time. GaCrN layers were grown on sapphire (0001) substrates by electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy. X-ray diffraction measurement showed no existence of secondary phase in the GaCrN layers. They showed a ferromagnetic behavior with a Curie temperature higher than 400 K, and clear saturation and hysteresis were observed in the magnetization versus magnetic field curves at all measuring temperatures. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：37 / 39

页数：3

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High temperature (&gt;400 K) ferromagnetism, in III-V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy

High temperature (>400 K) ferromagnetism, in III-V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy