High-performance and light-emitting n-type organic field-effect transistors based on dithienylbenzothiadiazole and related heterocycles

被引:88
作者
Kono, Takahiro
Kumaki, Daisuke
Nishida, Jun-ichi
Sakanoue, Tomo
Kakita, Motoyasu
Tada, Hirokazu
Tokito, Shizuo
Yamashita, Yoshiro [1 ]
机构
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Elect Chem, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Grad Univ Adv Studies, Dept Struct Mol Sci, Okazaki, Aichi 4448585, Japan
[3] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan
[4] Osaka Univ, Grad Sch Engn Sci, Div Mat Phys, Toyonaka, Osaka 5608531, Japan
关键词
D O I
10.1021/cm062889+
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The high performance n-type field effect transistor (FET) characteristics and light-emitting properties of a dithienylbenzothiadiazole with trifluoromethylphenyl groups and the corresponding benzoselenadiazole and quinoxaline derivatives were investigated. FET devices with botton contact geometry were constructed by vapor-deposition on SiO2/Si substrate and FET measurement were carried out at room temperature in a vacuum chamber without air exposure. The FET performance was optimized by fabricating the device with top contact geometry, where gold electrodes were defined after 50 nm of semiconductor deposition by using shadow masks. The electron mobility calculated in the saturation regime was 0.19 cm2 V-1S -1 at 80°C. The emission intensity is found to be increased with an increase in drain voltages due to the increased carrier recombination. The results show that the benzothiadiazole unit reduces the threshold voltage.
引用
收藏
页码:1218 / 1220
页数:3
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