Magnetoresistance in magnetic tunnel junctions grown on flexible organic substrates

被引：108

作者：

Barraud, C. ^{[1
]}

Deranlot, C.

Seneor, P.

Mattana, R.

Dlubak, B.

Fusil, S.

Bouzehouane, K.

Deneuve, D.

Petroff, F.

Fert, A.

机构：

[1] CNRS Thales, Unite Mixte Phys, F-91767 Palaiseau, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 07期

关键词：

alumina; cobalt; ferromagnetic materials; flexible electronics; magnetic multilayers; magnetoelectronics; tunnelling magnetoresistance; GIANT MAGNETORESISTANCE; CO/CU MULTILAYERS; SENSORS; GMR; MAGNETOSTRICTION;

D O I：

10.1063/1.3300717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and spin dependent tunneling studies of magnetic tunnel junctions (MTJs) grown on flexible organic substrates. We observe comparable tunneling magnetoresistance (TMR) effects in standard Co/Al(2)O(3)/Co MTJs grown on either buffered polyester based organic substrates or silicon wafers. Moreover we show that after twisting and bending the MTJs on flexible substrates the TMR magnitude is maintained which indicates that spin dependent tunneling properties are preserved. This demonstrates that MTJs based spintronics devices are compatible with embodied flexible organic electronics.

引用

页数：3

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