Silicon single-electron quantum-dot transistor switch operating at room temperature

被引：293

作者：

Zhuang, L

Guo, LJ

Chou, SY

机构：

[1] Univ Minnesota, Dept Elect Engn, Nanostruct Lab, Minneapolis, MN 55455 USA

[2] Princeton Univ, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 10期

关键词：

D O I：

10.1063/1.121014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. These oscillations are attributed to electron tunneling through a single silicon quantum dot inside a narrow wire channel. Analysis of its current-voltage characteristic indicates that the energy level separation is about 110 meV and-the silicon dot diameter is about 12 nm. (C) 1998 American Institute of Physics. [S0003-6951(98)01210-8].

引用

收藏

页码：1205 / 1207

页数：3

相关论文

共 14 条

[1] THEORY OF COULOMB-BLOCKADE OSCILLATIONS IN THE CONDUCTANCE OF A QUANTUM DOT [J].

BEENAKKER, CWJ .

PHYSICAL REVIEW B, 1991, 44 (04) :1646-1656

[2] Fabrication of silicon nanopillars containing polycrystalline silicon/insulator multilayer structures [J].

Fukuda, H ;

Hoyt, JL ;

McCord, MA ;

Pease, RFW .

APPLIED PHYSICS LETTERS, 1997, 70 (03) :333-335

[3] A triangle-shaped nanoscale metal-oxide-semiconductor device [J].

Gondermann, J ;

Rower, T ;

Hadam, B ;

Koster, T ;

Stein, J ;

Spangenberg, B ;

Roskos, H ;

Kurz, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :4042-4045

[4] A silicon single-electron transistor memory operating at room temperature [J].

Guo, LJ ;

Leobandung, E ;

Chou, SY .

SCIENCE, 1997, 275 (5300) :649-651

[5] Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate [J].

Ishikuro, H ;

Fujii, T ;

Saraya, T ;

Hashiguchi, G ;

Hiramoto, T ;

Ikoma, T .

APPLIED PHYSICS LETTERS, 1996, 68 (25) :3585-3587

[6] Sub-10-nm Si lines fabricated using shifted mask patterns controlled with electron beam lithography and KOH anisotropic etching [J].

Kurihara, K ;

Namatsu, H ;

Nagase, M ;

Makino, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (12B) :6668-6672

[7] Single electron and hole quantum dot transistors operating above 110 K [J].

Leobandung, E ;

Guo, LJ ;

Wang, Y ;

Chou, SY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06) :2865-2868

[8] OBSERVATION OF QUANTUM EFFECTS AND COULOMB-BLOCKADE IN SILICON QUANTUM-DOT TRANSISTORS AT TEMPERATURES OVER 100 K [J].

LEOBANDUNG, E ;

GUO, LJ ;

WANG, Y ;

CHOU, SY .

APPLIED PHYSICS LETTERS, 1995, 67 (07) :938-940

[9] SINGLE HOLE QUANTUM-DOT TRANSISTORS IN SILICON [J].

LEOBANDUNG, E ;

GUO, LJ ;

CHOU, SY .

APPLIED PHYSICS LETTERS, 1995, 67 (16) :2338-2340

[10] The Coulomb blockade in coupled quantum dots [J].

Livermore, C ;

Crouch, CH ;

Westervelt, RM ;

Campman, KL ;

Gossard, AC .

SCIENCE, 1996, 274 (5291) :1332-1335