A model for tunneling current in multi-layer tunnel dielectrics

被引：39

作者：

Govoreanu, B

Blomme, P

Rosmeulen, M

Van Houdt, J

De Meyer, K

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, B-3001 Louvain, Belgium

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 06期

关键词：

tunneling current; multi-layer tunnel dielectrics; Airy functions; non-volatile memory devices;

D O I：

10.1016/S0038-1101(02)00514-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a model for the tunneling currents through multi-layer stacks based on the independent electron approximation and using an Airy functions based transfer matrix formalism. The transmission coefficient of a tunneling electron is exactly calculated using a simple compact quasi-analytical formula. Comparison with the traditional WKB models reveals differences for particular stack structures. This model is applied to the analysis of multilayer tunnel dielectrics that aim at replacing the conventional tunnel oxide in non-volatile memory devices. Analysis of the tunneling current for dual-layer stacks shows possibilities for higher speed and/or lower voltage programming, which can be achieved with high-k materials considered for SiO2 replacement as gate dielectric. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：1045 / 1053

页数：9

共 27 条

[1]

Abramowitz M., 1972, HDB MATH FUNCTION

[2]

Bransden B. H., 1989, INTRO QUANTUM MECH

[3] Gate tunneling currents in ultrathin oxide metal-oxide-silicon transistors [J].