OSCILLATIONS IN MOS TUNNELING

被引：96

作者：

LEWICKI, G ^{[1
]}

MASERJIAN, J ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91103

来源：

关键词：

D O I：

10.1063/1.321994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3032 / 3039

页数：8

共 8 条

[1] DUKE CB, 1969, TUNNELING SOLIDS S10
[2] ZUR BERECHNUNG DES TUNNELSTROMS DURCH EINE TRAPEZFORMIGE POTENTIALSTUFE
GUNDLACH, KH
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 949 - &
[3] LEWICKI G, 1966, J PHYS CHEM SOLIDS, V27, P1599
[4] SATURATION CAPACITANCE OF THIN OXIDE MOS STRUCTURES AND EFFECTIVE SURFACE DENSITY OF STATES OF SILICON
MASERJIA.J
PETERSSO.G
SVENSSON, C
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (04) : 335 - 339
[5] TUNNELING IN THIN MOS STRUCTURES
MASERJIAN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 996 - 1003
[6] TUNNELING THROUGH THIN MOS STRUCTURES - DEPENDENCE ON ENERGY (E-K)
MASERJIAN, J
PETERSSON, GP
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (01) : 50 - 52
[7] PETERSSON G, TO BE PUBLISHED
[8] WILLIAMS R, 1965, PHYS REV A, V140, P569