共 70 条
Dendrite-assisted growth of silicon nanowires in electroless metal deposition
被引:348
作者:

Peng, KQ
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机构:
Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

Yan, YJ
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Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

Gao, SP
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Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

Zhu, J
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机构:
Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
机构:
[1] Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
关键词:
D O I:
10.1002/adfm.200390018
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
This article concerns the detailed investigations on the silver dendrite-assisted growth of single-crystalline silicon nanowires, and their possible self-assembling nanoelectrochemistry growth mechanism. The growth of silicon nanowires was carried out through an electroless metal deposition process in a conventional autoclave containing aqueous HF and AgNO3 solution near room temperature. In order to explore the mechanism and prove the centrality of silver dendrites in the growth of silicon nanowires, other etching solution systems with different metal species were also investigated in this work. The morphology of etched silicon substrates strongly depends upon the composition of the etching solution, especially the metal species. Our experimental results prove that the simultaneous formation of silver dendrites is a guarantee of the preservation of free-standing nanoscale electrolytic cells on the silicon substrate, and also assists in the final formation of silicon nanowire arrays on the substrate surface.
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页码:127 / 132
页数:6
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共 70 条
[1]
Template-catalyst-free growth of highly ordered boron nanowire arrays
[J].
Cao, LM
;
Hahn, K
;
Scheu, C
;
Rühle, M
;
Wang, YQ
;
Zhang, Z
;
Gao, CX
;
Li, YC
;
Zhang, XY
;
He, M
;
Sun, LL
;
Wang, WK
.
APPLIED PHYSICS LETTERS,
2002, 80 (22)
:4226-4228

Cao, LM
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Met Res, D-70569 Stuttgart, Germany

Hahn, K
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Met Res, D-70569 Stuttgart, Germany

Scheu, C
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Met Res, D-70569 Stuttgart, Germany

Rühle, M
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Met Res, D-70569 Stuttgart, Germany

Wang, YQ
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Met Res, D-70569 Stuttgart, Germany

Zhang, Z
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Met Res, D-70569 Stuttgart, Germany

Gao, CX
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Met Res, D-70569 Stuttgart, Germany

Li, YC
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Met Res, D-70569 Stuttgart, Germany

Zhang, XY
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Met Res, D-70569 Stuttgart, Germany

He, M
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Met Res, D-70569 Stuttgart, Germany

Sun, LL
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Met Res, D-70569 Stuttgart, Germany

Wang, WK
论文数: 0 引用数: 0
h-index: 0
机构: Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[2]
The formation of dimensionally ordered silicon nanowires within mesoporous silica
[J].
Coleman, NRB
;
Morris, MA
;
Spalding, TR
;
Holmes, JD
.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
2001, 123 (01)
:187-188

Coleman, NRB
论文数: 0 引用数: 0
h-index: 0
机构: Natl Univ Ireland Univ Coll Cork, Dept Chem, Cork, Ireland

Morris, MA
论文数: 0 引用数: 0
h-index: 0
机构: Natl Univ Ireland Univ Coll Cork, Dept Chem, Cork, Ireland

Spalding, TR
论文数: 0 引用数: 0
h-index: 0
机构: Natl Univ Ireland Univ Coll Cork, Dept Chem, Cork, Ireland

Holmes, JD
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Univ Ireland Univ Coll Cork, Dept Chem, Cork, Ireland Natl Univ Ireland Univ Coll Cork, Dept Chem, Cork, Ireland
[3]
Engineering carbon nanotubes and nanotube circuits using electrical breakdown
[J].
Collins, PC
;
Arnold, MS
;
Avouris, P
.
SCIENCE,
2001, 292 (5517)
:706-709

Collins, PC
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

Arnold, MS
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

Avouris, P
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
[4]
Functional nanoscale electronic devices assembled using silicon nanowire building blocks
[J].
Cui, Y
;
Lieber, CM
.
SCIENCE,
2001, 291 (5505)
:851-853

Cui, Y
论文数: 0 引用数: 0
h-index: 0
机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

Lieber, CM
论文数: 0 引用数: 0
h-index: 0
机构:
Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA
[5]
Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species
[J].
Cui, Y
;
Wei, QQ
;
Park, HK
;
Lieber, CM
.
SCIENCE,
2001, 293 (5533)
:1289-1292

Cui, Y
论文数: 0 引用数: 0
h-index: 0
机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

Wei, QQ
论文数: 0 引用数: 0
h-index: 0
机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

Park, HK
论文数: 0 引用数: 0
h-index: 0
机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

Lieber, CM
论文数: 0 引用数: 0
h-index: 0
机构: Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA
[6]
Carbon nanotube inter- and intramolecular logic gates
[J].
Derycke, V
;
Martel, R
;
Appenzeller, J
;
Avouris, P
.
NANO LETTERS,
2001, 1 (09)
:453-456

Derycke, V
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

Martel, R
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

Appenzeller, J
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

Avouris, P
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[7]
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
[J].
Duan, XF
;
Huang, Y
;
Cui, Y
;
Wang, JF
;
Lieber, CM
.
NATURE,
2001, 409 (6816)
:66-69

Duan, XF
论文数: 0 引用数: 0
h-index: 0
机构: Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA

论文数: 引用数:
h-index:
机构:

Cui, Y
论文数: 0 引用数: 0
h-index: 0
机构: Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA

Wang, JF
论文数: 0 引用数: 0
h-index: 0
机构: Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA

Lieber, CM
论文数: 0 引用数: 0
h-index: 0
机构:
Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA
[8]
HIGH-RATE, GAS-PHASE GROWTH OF MOS2 NESTED INORGANIC FULLERENES AND NANOTUBES
[J].
FELDMAN, Y
;
WASSERMAN, E
;
SROLOVITZ, DJ
;
TENNE, R
.
SCIENCE,
1995, 267 (5195)
:222-225

论文数: 引用数:
h-index:
机构:

WASSERMAN, E
论文数: 0 引用数: 0
h-index: 0
机构: WEIZMANN INST SCI, DEPT MAT & INTERFACES, IL-76100 REHOVOT, ISRAEL

SROLOVITZ, DJ
论文数: 0 引用数: 0
h-index: 0
机构: WEIZMANN INST SCI, DEPT MAT & INTERFACES, IL-76100 REHOVOT, ISRAEL

论文数: 引用数:
h-index:
机构:
[9]
Crossed nanotube junctions
[J].
Fuhrer, MS
;
Nygård, J
;
Shih, L
;
Forero, M
;
Yoon, YG
;
Mazzoni, MSC
;
Choi, HJ
;
Ihm, J
;
Louie, SG
;
Zettl, A
;
McEuen, PL
.
SCIENCE,
2000, 288 (5465)
:494-497

Fuhrer, MS
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

Nygård, J
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

Shih, L
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

Forero, M
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

Yoon, YG
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

Mazzoni, MSC
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

Choi, HJ
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

Ihm, J
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

Louie, SG
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

Zettl, A
论文数: 0 引用数: 0
h-index: 0
机构: Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

McEuen, PL
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[10]
First stages of platinum electroless deposition on silicon(100) from hydrogen fluoride solutions studied by AFM
[J].
Gorostiza, P
;
Servat, J
;
Morante, JR
;
Sanz, F
.
THIN SOLID FILMS,
1996, 275 (1-2)
:12-17

论文数: 引用数:
h-index:
机构:

Servat, J
论文数: 0 引用数: 0
h-index: 0
机构: UNIV BARCELONA,FAC QUIM,DEPT QUIM FIS,E-08028 BARCELONA,SPAIN

Morante, JR
论文数: 0 引用数: 0
h-index: 0
机构: UNIV BARCELONA,FAC QUIM,DEPT QUIM FIS,E-08028 BARCELONA,SPAIN

Sanz, F
论文数: 0 引用数: 0
h-index: 0
机构: UNIV BARCELONA,FAC QUIM,DEPT QUIM FIS,E-08028 BARCELONA,SPAIN