Origin of white color light emission in ALE-grown ZnSe

被引：42

作者：

Godlewski, M

Guziewicz, E

Kopalko, K

Lusakowska, E

Dynowska, E

Godlewski, MM

Goldys, EM

Phillips, MR

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Agr Univ Warsaw, Fac Vet Med, Dept Physiol Sci, Warsaw, Poland

[3] Macquarie Univ, Semicond Sci & Technol Lab, N Ryde, NSW 2109, Australia

[4] Univ Technol Sydney, Micropstruct Anal Unit, Sydney, NSW 2007, Australia

来源：

JOURNAL OF LUMINESCENCE | 2003年 / 102卷

关键词：

white light emission; ZnSe; atomic layer epitaxy; cathodoluminescence;

D O I：

10.1016/S0022-2313(02)00597-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We discuss light emission properties from thin films of ZnSe grown by atomic layer epitaxy on GaAs (100). White color emission is observed in photoluminescence and cathodoluminescence, due to the observation of three RGB emission bands. We demonstrate possibility of color tuning by either variation of film thickness or, in cathodoluminescence experiments, variation of an accelerating voltage. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：455 / 459

页数：5

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