The influence of electron irradiation on electron holography of focused ion beam milled GaAs p-n junctions

被引：29

作者：

Cooper, David ^{[1
]}

Twitchett-Harrison, Alison C. ^{[1
]}

Midgley, Paul A. ^{[1
]}

Dunin-Borkowski, Rafal E. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Met & Sci Mat, Cambridge CB2 3QZ, England

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 09期

关键词：

D O I：

10.1063/1.2730557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs p-n junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the specimen overcomes this problem, and may allow the correct built in potential across the junction to be recovered. (c) 2007 American Institute of Physics.

引用

页数：5

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