Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate

被引：18

作者：

Chang, Shih-Pang ^{[1
,2
,3
]}

Lu, Tien-Chang ^{[1
,2
,4
]}

Zhuo, Li-Fu ^{[1
,2
]}

Jang, Chung-Ying ^{[1
,2
]}

Lin, Da-Wei ^{[1
,2
]}

Yang, Hung-Chih ^{[3
]}

Kuo, Hao-Chung ^{[1
,2
]}

Wang, Shing-Chung ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Epistar Co Ltd, Div Res & Dev, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Hsinchu 711, Tainan, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 05期

关键词：

carrier density; current density; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; photoluminescence; polarisation; semiconductor quantum wells; wide band gap semiconductors; SEMIPOLAR; GREEN;

D O I：

10.1149/1.3327909

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The low droop nonpolar m-plane InGaN/GaN light emitting diode (LED) has been fabricated and investigated. The external quantum efficiency for a 300x300 mu m square LED chip only drops about 18% from maximum at an operation current of 22 A/cm(2) (20 mA) to 330 A/cm(2) (300 mA) dc operations at room temperature. In addition, the internal quantum efficiency has been extracted by temperature-dependent photoluminescence measurements, and there is no droop observed as the carrier density increases. The small droop in efficiency of m-plane LEDs could be due to the lack of polarization effects that enhances the carrier confinement under high current density operation. The polarization anisotropy is clearly observed in the m-plane LED, and the degree of polarization is 68%.

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收藏

页码：H501 / H503

页数：3

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