Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

被引：54

作者：

Li, X. ^{[1
]}

Ni, X. ^{[1
]}

Lee, J. ^{[1
]}

Wu, M. ^{[1
]}

Ozgur, U. ^{[1
]}

Morkoc, H. ^{[1
]}

Paskova, T. ^{[2
]}

Mulholland, G. ^{[2
]}

Evans, K. R. ^{[2
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA

[2] Kyma Technol Inc, Raleigh, NC 27617 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 12期

基金：

美国国家科学基金会;

关键词：

QUANTUM-WELLS; GAN;

D O I：

10.1063/1.3236538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the internal quantum efficiency (IQE) and the relative external quantum efficiency (EQE) of m-plane InGaN light emitting diodes (LEDs) grown on m-plane freestanding GaN emitting at similar to 400 nm for current densities up to 2500 A/cm(2). IQE values extracted from intensity and temperature dependent photoluminescence measurements were consistently higher, by some 30%, for the m-plane LEDs than for reference c-plane LEDs having the same structure, e. g., 80% versus 60% at an injected steady-state carrier concentration of 1.2 x 10(18) cm(-3). With increasing current injection up to 2500 A/cm(2), the maximum EQE is nearly retained in m-plane LEDs, whereas c-plane LEDs exhibit approximately 25% droop. The negligible droop in m-plane LEDs is consistent with the reported enhanced hole carrier concentration and light holes in m-plane orientation, thereby enhanced hole transport throughout the active region, and lack of polarization induced field. A high quantum efficiency and in particular its retention at high injection levels bode well for m-plane LEDs as candidates for general lighting applications. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3236538]

引用

页数：3

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