High-brightness organic double-quantum-well electroluminescent devices

被引:48
作者
Huang, JS [1 ]
Yang, KX
Liu, SY
Jiang, HJ
机构
[1] Jilin Univ, Natl Lab Integrated Optoelect, Changchun 130023, Peoples R China
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Photon Res Grp, Singapore 639798, Singapore
关键词
D O I
10.1063/1.1311313
中图分类号
O59 [应用物理学];
学科分类号
摘要
An organic double-quantum-well structure electroluminescent device fabricated by a doping method is demonstrated. The device consists of N,N'-bis-(1-naphthl)-N,N-'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) used as a hole transporter, undoped tris(8-quinolinolato) aluminum (Alq) as a barrier potential or electron transporter, and Alq doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter, and has the following structure: indium tin oxide/NPB/Alq:rubrene/Alq/Alq:rubrene/Alq/Mg/Al. The maximum brightness and efficiency reach 48 000 cd/m(2) and 4.59 lm/W, respectively. The present double-quantum-well structure device shows higher brightness and higher efficiency than those of the common heterostructure devices. (C) 2000 American Institute of Physics. [S0003-6951(00)01838-6].
引用
收藏
页码:1750 / 1752
页数:3
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