Phase formation process of IrxSi1-x thin films structure and electrical properties

Experimental data on the phase formation process of amorphous IrxSi1-x thin films with 0.30 less than or equal to x less than or equal to 0.41 are presented and discussed in relation to electric transport properties. The structure formation process at temperatures from 300 K up to 1223 K was investigated by means of X-ray diffraction. Distinct phases were observed in the final stage in dependence on the initial composition: Ir3Si4, Ir3Si5, and IrSi3. An unknown metastable phase was found in films with a silicon concentration of 61 at.% to 64 at.% after annealing above the crystallization temperature T = 970 K. The crystal structure of this phase was determined by the combined use of X-ray diffraction and electron diffraction. It was found to be monoclinic, basic-face centred with lattice constants a = 1.027 nm. b = 0.796 nm, c = 0.609 nm, and gamma = 113.7 degrees. Additionally, microstructure and morphology of the films were investigated by transmission electron microscopy (TEM). The annealing process was studied by means of mechanical stress investigations as well as by electrical resistivity and thermopower measurements. Correlations between the structure, the phase formation and the electrical transport behaviour are discussed on the basis of conduction mechanism. (C) 1997 Elsevier Science S.A.