Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers

被引：42

作者：

Huang, ZH ^{[1
]}

Oh, J ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期

关键词：

D O I：

10.1063/1.1805706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report photodiodes fabricated on Ge grown on Si substrate. The Ge growth was preceded by two SixGe1-x buffer layers. Dark current as low as 1.07 muA was achieved at 10 V reverse bias for 24 mum-diam mesa devices. At 1.3 mum wavelength, the responsivity was 0.37 A/W at 0 V and 0.57 A/W when above TV reverse bias. The 3 dB bandwidth was 8.1 GHz at a reverse bias of 10 V. (C) 2004 American Institute of Physics.

引用

页码：3286 / 3288

页数：3

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