Large-area three-dimensional structuring by electrochemical etching and lithography

被引：100

作者：

Matthias, S

Müller, F

Jamois, C

Wehrspohn, RB

Gösele, U

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle Saale, Germany

[2] Univ Gesamthsch Paderborn, Dept Phys, D-33098 Paderborn, Germany

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 23-24期

关键词：

D O I：

10.1002/adma.200400436

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The fabrication of three-dimensional silicon networks (see Figure) via a self-stabilized electrochemical etching technique onto lithographically pre-structured substrates is demonstrated. The optical characterization confirms a complete three-dimensional photonic bandgap of about 4% centered at 3 mum.

引用

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页码：2166 / +

页数：6

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