Fabrication of ZnO-based metal-insulator-semiconductor diodes by ion implantation

被引：82

作者：

Alivov, YI

Look, DC

Ataev, BM

Chukichev, MV

Mamedov, VV

Zinenko, VI

Agafonov, YA

Pustovit, AN

机构：

[1] RAS, Inst Microelect Technol, Dept Phys, Chernogolovka 142432, Moscow, Russia

[2] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[3] RAS, Inst Phys, Daghestan Sci Ctr, Makhachkala 367003, Russia

[4] Moscow MV Lomonosov State Univ, Dept Phys, Moscow, Russia

来源：

SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 12期

关键词：

zinc oxide; implantation; metal-insulator-semiconductor diodes; electroluminescence;

D O I：

10.1016/j.sse.2004.05.063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A ZnO-based metal-insulator-semiconductor junction has been fabricated using an isolation layer fabricated by N+ ion implantation. I-V dependences show a good rectifying diode-like behavior with a low leakage current of 10(-6) A and a threshold voltage of about 3 V. Ultraviolet light emission under forward bias exhibits a wavelength maximum of 388 nm and a full width at half maximum of 128 meV at room temperature. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：2343 / 2346

页数：4

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