A direct transfer of layer-area graphene

被引：329

作者：

Regan, William ^{[1
,2
]}

Alem, Nasim ^{[1
,2
,3
]}

Aleman, Benjamin ^{[1
,2
,3
]}

Geng, Baisong ^{[1
,4
]}

Girit, Caglar ^{[1
,2
]}

Maserati, Lorenzo ^{[1
,5
]}

Wang, Feng ^{[1
,2
,3
]}

Crommie, Michael ^{[1
,2
,3
]}

Zettl, A. ^{[1
,2
,3
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] COINS, Ctr Integrated Nanomech Syst, Berkeley, CA 94720 USA

[4] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

[5] Politecn Milan, I-20133 Milan, Italy

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 11期

基金：

美国国家科学基金会;

关键词：

copper; graphene; substrates; transmission electron microscopy; GRAPHITE; FILMS; MEMBRANES;

D O I：

10.1063/1.3337091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A facile method is reported for the direct (polymer-free) transfer of layer-area graphene from metal growth substrates to selected target substrates. The direct route, by avoiding several wet chemical steps and accompanying mechanical stresses and contamination common to all presently reported layer-area graphene transfer methods, enables fabrication of layer-area graphene devices with unprecedented quality. To demonstrate, we directly transfer layer-area graphene from Cu growth substrates to holey amorphous carbon transmission electron microscopy (TEM) grids, resulting in robust, clean, full-coverage graphene grids ideal for high resolution TEM.

引用

页数：3

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