Contact hole size reducing methods by using water-soluble organic over-coating material(WASOOM) as a barrier layer toward 0.15um contact hole; Resist flow technique I

被引:10
作者
Chun, JS [1 ]
Bakshi, S [1 ]
Barnett, S [1 ]
Shih, J [1 ]
Lee, SK [1 ]
机构
[1] Integrated Device Technol Inc, R&D, Hillsboro, OR 97124 USA
来源
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2 | 2000年 / 3999卷
关键词
resist flow; WASOOM; water soluble; 0.15um contact hole; half tone mask; SOG;
D O I
10.1117/12.388347
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In our experiment for 0.15um contact hole, we used Water-soluble organic overcoating material (WASOOM) as a barrier layer. Since WASOOM is water soluble, after baking for resist flow, water rinse will remove it completely. The key point of resist flow technique is to reduce overhang, in other words, reducing thermal stress at the top and bottom of resist pattern by WASOOM can lead to well-controlled DICD. Since WASOOM is water soluble and very compatible with resist, during resist flow, it is assumed that it will be acting as a barrier layer so that overhang should be reduced. In this paper we will describe below 0.2um contact hole pattern without over-hang profile, well controlled DICD andfine etch profile. And also 0.15um contact hole patterning method will be described with half tone + resist flow by WASOOM. And also we will describe the application of SOG (Spin On Gla;ss)for removing top flare after resist baking.
引用
收藏
页码:620 / 626
页数:5
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