1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

被引:56
作者
Ledentsov, NN
Maximov, MV
Bimberg, D
Maka, T
Torres, CMS
Kochnev, IV
Krestnikov, IL
Lantratov, VM
Cherkashin, NA
Musikhin, YM
Alferov, ZI
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] Univ Wuppertal, Inst Mat Sci, D-42097 Wuppertal, Germany
[4] Univ Wuppertal, Dept Elect Engn, D-42097 Wuppertal, Germany
关键词
D O I
10.1088/0268-1242/15/6/320
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Annealing of InGaAs quantum dots (QDs) fabricated by metal-organic chemical vapour deposition and covered with a very thin GaAs cap layer completely eliminates large dislocated InGaAs clusters and remarkably improves the optical properties of the structures. A modal gain of similar to 4 cm(-1) is achieved in the 1.35 mu m range. The elimination of defects allows the stacking of QDs emitting at 1.3 mu m without deterioration of their optical and structural properties and reduces the QD density in the upper sheets.
引用
收藏
页码:604 / 607
页数:4
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