High-pressure semiconductor-semimetal transition in TiS2

被引：80

作者：

Allan, DR ^{[1
]}

Kelsey, AA

Clark, SJ

Angel, RJ

Ackland, GJ

机构：

[1] Univ Bayreuth, Bayer Geoinst, D-9544 Bayreuth, Germany

[2] Univ Edinburgh, Dept Phys & Astron, Edinburgh EH9 3JZ, Midlothian, Scotland

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.57.5106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present results of high-pressure single-crystal x-ray-diffraction studies and ab initio pseudopotential calculations of stoichiometric TiS2. Neither present any evidence for a structural phase transition; it is shown that the material undergoes an isostructural semiconductor-semimetal phase transition between 4 and 6 Gpa.

引用

页码：5106 / 5110

页数：5

共 34 条

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