Controlling the nanoscale morphology of organic films deposited by polyatomic ions

被引:21
作者
Hanley, L [1 ]
Choi, YS
Fuoco, ER
Akin, FA
Wijesundara, MBJ
Li, M
Tikhonov, A
Schlossman, M
机构
[1] Univ Illinois, Dept Chem, M-C 111,845 W Taylor St 4500 SES, Chicago, IL 60607 USA
[2] Univ Illinois, Dept Phys, Chicago, IL 60607 USA
关键词
ion-surface; ion bombardment; polyatomic ions; sputtering; morphology; nanotechnology;
D O I
10.1016/S0168-583X(02)02183-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Hyperthermal polyatomic ion beams can be used to fabricate thin film nanostructures with controlled morphology. Several experiments are described in which mass-selected and non-mass-selected polyatomic ion beams are used to create nanometer thick films with controlled surface and buried interface morphologies. Fluorocarbon and thiophenic films are grown on silicon wafers and/or polystyrene from 5 to 200 eV C3F5+ or C4H4S+ ions, respectively. X-ray photoelectron spectroscopy, atomic force microscopy, X-ray reflectivity, and scanning electron microscopy are utilized to analyze the morphology and chemistry of these films. Polyatomic ions are found to control film morphology on the nanoscale through variation of the incident ion energy, ion structure and/or substrate. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:116 / 123
页数:8
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