MgO/Ag(001) interface structure and STM images from first principles

被引:28
作者
Lopez, N
Valeri, S
机构
[1] Univ Barcelona, Dept Quim Fis, E-08028 Barcelona, Spain
[2] Univ Barcelona, Ctr Especial Recerca & Quim Teor, E-08028 Barcelona, Spain
[3] INFM, Natl Res Ctr Nanostruct & Biosyst Surfaces S3, I-41100 Modena, Italy
关键词
D O I
10.1103/PhysRevB.70.125428
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interface of MgO/Ag(001) has been studied with density functional theory applied to slabs. We have found that regular MgO films show a small adhesion to the silver substrate, the binding can be increased in off-stoichiometric regimes, either by the presence of O vacancies at the oxide film or by a small excess of O atoms at the interface between the ceramic to the metal. By means of theoretical methods, the scanning tunneling microscopy signatures of these films is also analyzed in some detail. For defect free deposits containing 1 or 2 ML and at low voltages, tunnelling takes place from the surface Ag substrate, and at large positive voltages Mg atoms are imaged. If defects, oxygen vacancies, are present on the surface of the oxide they introduce much easier channels for tunnelling resulting in big protrusions and controlling the shape of the image, the extra O stored at the interface can also be detected for very thin films.
引用
收藏
页码:125428 / 1
页数:8
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