Origin and Tunability of Unusually Large Surface Capacitance in Doped Cerium Oxide Studied by Ambient-Pressure X-Ray Photoelectron Spectroscopy

被引：37

作者：

Gopal, Chirranjeevi Balaji ^{[1
]}

El Gabaly, Farid ^{[2
]}

McDaniel, Anthony H. ^{[2
]}

Chueh, William C. ^{[1
,2
,3
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, 496 Lomita Mall, Stanford, CA 94305 USA

[2] Sandia Natl Labs, Livermore, CA 94550 USA

[3] Stanford Inst Mat & Energy Sci, SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 23期

关键词：

LOW-INDEX SURFACES; CHEMICAL CAPACITANCE; THIN-FILMS; ELECTRONIC-STRUCTURE; OXYGEN-ION; NONSTOICHIOMETRY; STORAGE; INTERCALATION; CATALYSIS; TRANSPORT;

D O I：

10.1002/adma.201506333

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The volumetric redox (chemical) capacitance of the surface of CeO2-delta films is quantified in situ to be 100-fold larger than the bulk values under catalytically relevant conditions. Sm addition slightly lowers the surface oxygen nonstoichiometry, but effects a 10-fold enhancement in surface chemical capacitance by mitigating defect interactions, highlighting the importance of differential nonstoichiometry for catalysis.

引用

页码：4692 / 4697

页数：6

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