Low-frequency noise in polymer thin-film transistors

被引：27

作者：

Marinov, O ^{[1
]}

Deen, MJ

Yu, J

Vamvounis, G

Holdcroft, S

Woods, W

机构：

[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada

[2] Simon Fraser Univ, Dept Chem, Vancouver, BC V5A 1S6, Canada

[3] Simon Fraser Univ, Sch Engn Sci, Vancouver, BC V5A 1S6, Canada

来源：

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 2004年 / 151卷 / 05期

关键词：

D O I：

10.1049/ip-cds:20040916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low-frequency noise (LFN) properties of the polymer field effect transistors (PFETs) using polymer semiconducting material are investigated and discussed in terms of the charge carrier transport. Results obtained from several research groups are summarised. A general trend of proportionality between noise power density and the DC power applied to the PFET channel is observed in the data from publications. This trend implies that the mobility fluctuation in the PFET is the dominant noise source.

引用

页码：466 / 472

页数：7

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