Low-frequency noise in cadmium-selenide thin-film transistors

被引：21

作者：

Deen, MJ ^{[1
]}

Rumyantsev, SL

Landheer, D

Xu, DX

机构：

[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada

[2] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期

关键词：

D O I：

10.1063/1.1314887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-frequency noise in cadmium-selenide (CdSe) thin-film transistors (TFTs) has been studied over a wide range of gate and drain biases, temperatures, and gate areas. The dependencies of the noise on the gate voltage and the gate length indicate that the 1/f noise originates from the bulk sources homogeneously distributed in the channel. The value of Hooge parameter alpha lies within the usual range 10(-3)<alpha < 2x10(-2) for Si TFTs and amorphous Si. (C) 2000 American Institute of Physics. [S0003-6951(00)03740-2].

引用

页码：2234 / 2236

页数：3

共 14 条

[1]

BRODY TP, 1975, IEEE TRANS ELECT DEV, V20, P739

[2] HIGH-VOLTAGE POLYCRYSTALLINE CDSE THIN-FILM TRANSISTORS [J].

DEBAETS, J ;

VANFLETEREN, J ;

DERYCKE, I ;

DOUTRELOIGNE, J ;

VANCALSTER, A ;

DEVISSCHERE, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :636-639

[3]

DEEN MJ, UNPUB

[4] THIN-FILM CADMIUM SELENIDE TECHNOLOGY IN LARGE AREA ACTIVE MATRIX HIGH-RESOLUTION DISPLAYS [J].

FARRELL, J ;

WESTCOTT, M ;

VANCALSTER, A ;

DEBAETS, J ;

DERYCKE, I ;

CAPON, J ;

DESMET, H ;

DOUTRELOIGNE, J ;

VANFLETEREN, J .

MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) :187-190

[5] 1/F NOISE SOURCES [J].

HOOGE, FN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :1926-1935

[6]

LANDHEER D, 1997, J VAC SCI TECHNOL A, V16, P834

[7]

LEE MJ, 1991, P 1991 INT DISPL RES, P211

[8] THIN-FILM TRANSISTORS WITH SPUTTERED CDSE AS SEMICONDUCTOR [J].

MOERSCH, G ;

RAVA, P ;

SCHWARZ, F ;

PACCAGNELLA, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (02) :449-451

[9] 1/f noise investigations in small channel length amorphous silicon thin film transistors [J].

Rhayem, J ;

Valenza, M ;

Rigaud, D ;

Szydlo, N ;

Lebrun, H .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3660-3667

[10] RECONCILIATION OF DIFFERENT GATE-VOLTAGE DEPENDENCIES OF 1/F NOISE IN N-MOS AND P-MOS TRANSISTORS [J].

SCOFIELD, JH ;

BORLAND, N ;

FLEETWOOD, DM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :1946-1952

← 1 2 →