Silver nanowires grown in the pores of a silica gel

被引：82

作者：

Bhattacharyya, S ^{[1
]}

Saha, SK

Chakravorty, D

机构：

[1] Bidhannagar Coll, Dept Phys, Calcutta 700064, W Bengal, India

[2] Indian Assoc Cultivat Sci, Calcutta 700032, W Bengal, India

[3] Indian Inst Sci, Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560064, Karnataka, India

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 23期

关键词：

D O I：

10.1063/1.1327278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silver nanowires of diameter similar to 40 nm and length similar to0.3 mm have been grown by electrodeposition within the pores of silica gels which were heat treated in the temperature range 523 to 823 K and, subsequently, soaked in a silver nitrate solution. A staircase current-voltage characteristic was observed in the direction of electrodeposition after nanowires were disrupted by the application of a dc voltage pulse. Such gels containing interrupted nanowires of silver showed a dielectric constant value similar to 10(4) both in directions parallel and perpendicular to that of electrodeposition. (C) 2000 American Institute of Physics. [S0003-6951(00)02047-7].

引用

页码：3770 / 3772

页数：3

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