Growth mechanism of TiSi nanopins on Ti5Si3 by atmospheric pressure chemical vapor deposition

被引：20

作者：

Du, Jun ^{[1
]}

Du, Piyi

Hao, Peng

Huang, Yanfei

Ren, Zhaodi

Han, Gaorong

Weng, Wenjian

Zhao, Gaoling

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

[2] Nanchang Univ, Dept Chem Engn, Nanchang 330029, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2007年 / 111卷 / 29期

关键词：

NANOWIRES; SI(001); ARRAYS;

D O I：

10.1021/jp071019s

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-density single crystalline orthorhombic TiSi nanopins were successfully synthesized on Ti5Si3 by atmospheric pressure chemical vapor deposition, using SiH4 and TiCl4 as the precursors. The growth mechanism was also investigated in detail. The results show that the maximum density of TiSi nanopins is obtained at the deposition temperature of 730 degrees C. TiSi nanopins grow along with [110] direction. The dimensions of quadrate tip of nanopins increase with deposition time, and the shape of the nanopin changes with the concentration of (SiH4 + TiCl4). A possible growth process is proposed which is well consistent with the experimental results.

引用

页码：10814 / 10817

页数：4

共 17 条

[1]

CARTER L, 1982, MOL ELECT DEVICES

[2] Nanowires of four epitaxial hexagonal silicides grown on Si(001) [J].

Chen, Y ;

Ohlberg, DAA ;

Williams, RS .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) :3213-3218

[3] Carbon nanotube inter- and intramolecular logic gates [J].

Derycke, V ;

Martel, R ;

Appenzeller, J ;

Avouris, P .

NANO LETTERS, 2001, 1 (09) :453-456

[4] Nucleation and growth of TiSi2 thin films deposited on glass by atmospheric pressure chemical vapor deposition [J].

Du, Jun ;

Du, Piyi ;

Xu, Ming ;

Hao, Peng ;

Huang, Yanfei ;

Han, Gaorong ;

Song, Chenlu ;

Weng, Wenjian ;

Wang, Jianxun ;

Shen, Ge .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)

[5] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].

Duan, XF ;

Huang, Y ;

Cui, Y ;

Wang, JF ;

Lieber, CM .

NATURE, 2001, 409 (6816) :66-69

[6] Endotaxial silicide nanowires [J].

He, ZA ;

Smith, DJ ;

Bennett, PA .

PHYSICAL REVIEW LETTERS, 2004, 93 (25) :256102-1

[7] Crystallographic alignment of high-density gallium nitride nanowire arrays [J].

Kuykendall, T ;

Pauzauskie, PJ ;

Zhang, YF ;

Goldberger, J ;

Sirbuly, D ;

Denlinger, J ;

Yang, PD .

NATURE MATERIALS, 2004, 3 (08) :524-528

[8] SELECTIVE DEPOSITION OF TISI2 ON OXIDE PATTERNED WAFERS USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

LEE, J ;

REIF, R .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (04) :331-337

[9]

Li CP, 2002, ADV MATER, V14, P218, DOI 10.1002/1521-4095(20020205)14:3<218::AID-ADMA218>3.0.CO

[10]

2-7

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