Single crystal growth and oxide ion conductivity of apatite-type rare-earth silicates

被引：70

作者：

Higuchi, M ^{[1
]}

Masubuchi, Y

Nakayama, S

Kikkawa, S

Kodaira, K

机构：

[1] Hokkaido Univ, Grad Sch Engn, Div Engn & Mat Sci, Sapporo, Hokkaido 0608628, Japan

[2] Niihama Natl Coll Technol, Dept Appl Chem & Biotechnol, Niihama 7928580, Japan

来源：

SOLID STATE IONICS | 2004年 / 174卷 / 1-4期

关键词：

oxide ion conductivity; rare-earth silicate; floating zone method; structure refinement; cation vacancy;

D O I：

10.1016/j.ssi.2004.05.028

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Rare-earth silicate with an apatite structure is a new type of oxide ion conductor, the electrical conductivity of which is higher at relatively low temperatures than that of stabilized zirconia. Single crystals are indispensable in order to reveal the intrinsic bulk properties such as anisotropy of electrical conductivity. This paper reviews our recent research work on single crystals growth by the floating zone method and electrical properties of this material, including reinvestigation of phase relations in Nd2O3-SiO2 system and structure refinement using neutron diffraction. A possible mechanism for the oxide ion conduction is proposed based on the existence of cation vacancies. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：73 / 80

页数：8

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