All-solid-state electrochromic reflectance device for emittance modulation in the far-infrared spectral region

被引：69

作者：

Franke, EB ^{[1
]}

Trimble, CL

Schubert, M

Woollam, JA

Hale, JS

机构：

[1] Univ Nebraska, Ctr Microelect & Opt Mat Res, Lincoln, NE 68588 USA

[2] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[3] Inst Oberflachenmodifizierung Leipzig EV, D-04318 Leipzig, Germany

[4] JA Woollam Co Inc, Lincoln, NE 68588 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 07期

关键词：

D O I：

10.1063/1.1288810

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

All-solid-state electrochromic reflectance devices for thermal emittance modulation were designed for operation in the spectral region from mid- to far-infrared wavelengths (2-40 mu m). All device constituent layers were grown by magnetron sputtering. The electrochromic (polycrystalline WO3), ion conductor (Ta2O5), and Li+ ion-storage layer (amorphous WO3), optimized for their infrared (IR) optical thicknesses, are sandwiched between a highly IR reflecting Al mirror, and a 90% IR transmissive Al grid top electrode, thereby meeting the requirements for a reversible Li+ ion insertion electrochromic device to operate within the 300 K blackbody emission range. Multicycle optical switching and emittance modulation is demonstrated. The measured change in emissivity of the device is to 20%. (C) 2000 American Institute of Physics. [S0003-6951(00)01733-2].

引用

页码：930 / 932

页数：3

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