Room-temperature persistent spectral hole burning in Sm-doped KLaF4 crystals

被引：4

作者：

Kodama, N ^{[1
]}

Takahashi, T

Hirao, K

机构：

[1] Akita Univ, Fac Educ, Dept Chem, Akita 010, Japan

[2] Kyoto Univ, Fac Engn, Dept Ind Chem, Kyoto 60611, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 13期

关键词：

D O I：

10.1063/1.120578

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Persistent spectral hole burning is observed at room temperature in the excitation spectrum for the F-7(0)-->D-5(0) transition of Sm2+ in KLaF4 single crystals, The hole width and depth are about 10 cm(-1) and 18% of the total intensity, respectively. it is concluded that the dominant burning mechanism in this crystal is a photoionization of electron trapping at a site other than Sm3+ ions because of the absence of an antihole around the burned hole. (C) 1998 American Institute of Physics.

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页码：1548 / 1549

页数：2

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