Fano resonances in electronic transport through a single-electron transistor

被引:401
作者
Göres, J
Goldhaber-Gordon, D
Heemeyer, S
Kastner, MA
Shtrikman, H
Mahalu, D
Meirav, U
机构
[1] MIT, Dept Phys, Cambridge, MA 02139 USA
[2] Weizmann Inst Sci, Braun Ctr Submicron Res, IL-76100 Rehovot, Israel
来源
PHYSICAL REVIEW B | 2000年 / 62卷 / 03期
关键词
D O I
10.1103/PhysRevB.62.2188
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have observed asymmetric Fano resonances in the conductance of a single-electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical of single-electron addition to the confined droplet within the transistor, but the origin of the nonresonant path is unclear. A feature of this experimental system, compared to others that show Pane line shapes, is that changing the voltages on various gates allows one to alter the interference between the two paths.
引用
收藏
页码:2188 / 2194
页数:7
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